Display devices with image sensor

ABSTRACT

A display device is provided. The display device includes a display panel that has a display region. The display device also includes at least one image sensor that overlaps with the display region. The at least one image sensor includes a light-sensing element and at least one light-receiving element disposed on the light-sensing element.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Continuation Application of U.S. patentapplication Ser. No. 16/567,169, filed on Sep. 11, 2019, which claimspriority of a provisional application of U.S. Patent Application No.62/740,456 filed on Oct. 3, 2018 and China Patent Application No.201910410058.6 filed on May 17, 2019, the entirety of which areincorporated by reference herein.

BACKGROUND OF THE INVENTION Field of the Invention

The embodiments of the disclosure relate to a display device, and inparticular to a display device including an image sensor.

Description of the Related Art

As digital technology has advanced, display devices are widely used andindispensable to the daily life. In addition, the display devices havebeen developed to be thinner, lighter, smaller, and more fashionable.

However, the conventional display devices have not been satisfactory inevery respect. Therefore, a new display device is needed.

BRIEF SUMMARY OF THE INVENTION

The present disclosure discloses a display device. The display deviceincludes a display panel that has a display region. The display devicealso includes at least one image sensor that overlaps the displayregion. The image sensor includes a light-sensing element and at leastone light-receiving element that is disposed on the light-sensingelement.

The present disclosure also discloses a display device. The displaydevice includes a display panel that has a display region. The displaydevice also includes at least one sensor that overlaps the displayregion.

A detailed description is given in the following embodiments withreference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure may be more fully understood by reading the subsequentdetailed description and examples with references made to theaccompanying drawings, wherein:

FIG. 1 illustrates a cross-sectional view of a display device inaccordance with some embodiments of the present disclosure;

FIG. 2 illustrates a cross-sectional view of an image sensor inaccordance with some embodiments of the present disclosure;

FIG. 3 illustrates a top view of a display device in accordance withsome embodiments of the present disclosure;

FIG. 4 illustrates a cross-sectional view of a display device inaccordance with some embodiments of the present disclosure;

FIG. 5 illustrates a cross-sectional view of a display device inaccordance with some embodiments of the present disclosure;

FIG. 6 illustrates a cross-sectional view of a display device inaccordance with some embodiments of the present disclosure;

FIG. 7A illustrates a top view of a display device in accordance withsome embodiments of the present disclosure;

FIG. 7B illustrates a cross-sectional view of the display device shownin FIG. 7A in accordance with some embodiments of the presentdisclosure;

FIG. 8 illustrates a cross-sectional view of a display device inaccordance with some embodiments of the present disclosure;

FIG. 9 illustrates a cross-sectional view of a display device inaccordance with some embodiments of the present disclosure;

FIGS. 10A and 10B illustrate diagrams that show an interaction between adisplay device and objects in accordance with some embodiments of thepresent disclosure.

DETAILED DESCRIPTION OF THE INVENTION

The display device of the present disclosure is described in detail inthe following description. In the following detailed description, forpurposes of explanation, numerous specific details and embodiments areset forth in order to provide a thorough understanding of the presentdisclosure. The specific elements and configurations described in thefollowing detailed description are set forth in order to clearlydescribe the present disclosure. It will be apparent, however, that theexemplary embodiments set forth herein are used merely for the purposeof illustration, and the inventive concept may be embodied in variousforms without being limited to those exemplary embodiments. In addition,the drawings of different embodiments may use like and/or correspondingnumerals to denote like and/or corresponding elements in order toclearly describe the present disclosure. However, the use of like and/orcorresponding numerals in the drawings of different embodiments does notsuggest any correlation between different embodiments. In addition, inthis specification, expressions such as “first material layer disposedon/over a second material layer”, may indicate the direct contact of thefirst material layer and the second material layer, or it may indicateone or more intermediate layers formed between the first material layerand the second material layer. In the above situation, the firstmaterial layer may not be in direct contact with the second materiallayer.

It should be noted that the elements or devices in the drawings of thepresent disclosure may be present in any form or configuration known tothose skilled in the art. In addition, the expression “a layer overlyinganother layer”, “a layer is disposed above another layer”, “a layer isdisposed on another layer” and “a layer is disposed over another layer”may indicate that the layer is in direct contact with the other layer,or that the layer is not in direct contact with the other layer, therebeing one or more intermediate layers disposed between the layer and theother layer.

In addition, in this specification, relative expressions are used. Forexample, “lower”, “bottom”, “higher” or “top” are used to describe theposition of one element relative to another. It should be appreciatedthat if a device is flipped upside down, an element that is “lower” willbecome an element that is “higher”.

The terms “about” and “substantially” typically mean+/−20% of the statedvalue, more typically +/−10% of the stated value, more typically +/−5%of the stated value, more typically +/−3% of the stated value, moretypically +/−2% of the stated value, more typically +/−1% of the statedvalue and even more typically +/−0.5% of the stated value. The statedvalue of the present disclosure is an approximate value. When there isno specific description, the stated value includes the meaning of“about” or “substantially”.

It should be understood that, although the terms first, second, thirdetc. may be used herein to describe various elements, components,regions, layers, portions and/or sections, these elements, components,regions, layers, portions and/or sections should not be limited by theseterms. These terms are only used to distinguish one element, component,region, layer, portion or section from another region, layer or section.Thus, a first element, component, region, layer, portion or sectiondiscussed below could be termed a second element, component, region,layer, portion or section without departing from the teachings of thepresent disclosure.

Unless defined otherwise, all technical and scientific terms used hereinhave the same meaning as commonly understood by one of ordinary skill inthe art to which this disclosure belongs. It should be appreciated that,in each case, the term, which is defined in a commonly used dictionary,should be interpreted as having a meaning that conforms to the relativeskills of the present disclosure and the background or the context ofthe present disclosure, and should not be interpreted in an idealized oroverly formal manner unless so defined.

This description of the exemplary embodiments is intended to be read inconnection with the accompanying drawings, which are to be consideredpart of the entire written description. The drawings are not drawn toscale. In addition, structures and devices are shown schematically inorder to simplify the drawing.

In the description, relative terms such as “lower,” “upper,”“horizontal,” “vertical,”, “above,” “below,” “up,” “down,” “top” and“bottom” as well as derivative thereof (e.g., “horizontally,”“downwardly,” “upwardly,” etc.) should be construed to refer to theorientation as then described or as shown in the drawing underdiscussion. These relative terms are for convenience of description anddo not require that the apparatus be constructed or operated in aparticular orientation. Terms concerning attachments, coupling and thelike, such as “connected” and “interconnected,” refer to a relationshipwherein structures are secured or attached to one another eitherdirectly or indirectly through intervening structures, as well as bothmovable or rigid attachments or relationships, unless expresslydescribed otherwise.

The term “substrate” is meant to include devices formed on a transparentsubstrate and the layers overlying the transparent substrate, whereinall active elements (ex. transistors) needed may be already formed overthe substrate. However, the substrate shown in the accompanying drawingsis represented with a flat surface in order to simplify the drawings.The term “substrate surface” is meant to include the uppermost exposedlayers on the substrate, such as an insulating layer and/or metallurgylines.

The thickness of a structure described in the embodiments of thedisclosure indicates a value for the average thickness of the structureafter deleting outliers. The outliers can be the thickness of an edge,an obvious micro-trench, or an obvious micro-raised area. After deletingthe outliers, most values of the thickness are within a range of plus orminus three standard deviations.

Refer to FIG. 1, which illustrates a cross-sectional view of a displaydevice 100 in accordance with some embodiments of the presentdisclosure. The display device 100 may include modern informationapparatus, such as a television, a laptop, a computer, a feature phone,a smartphone, a public information display (PID), a touch display or atiled display. As shown in FIG. 1, the display device 100 may include adisplay panel 102; the display panel 102 may include a substrate 110 andlight-emitting units 120. The substrate 110 may include, but is notlimited to, a flexible or a non-flexible substrate, such as a glasssubstrate, a polymer substrate, a ceramic substrate, a sapphiresubstrate, a circuited board, a resin substrate, other suitablesubstrates or a combination thereof. In some embodiments, the substrate110 may include a single-layer structure or a multilayer structure. Thesubstrate 110 may include a plurality of active elements (not shown) oractive driving circuits (not shown), for example, thin film transistors(TFT). The thin film transistor may include, but is not limited to, aswitch transistor, a driving transistor, a reset transistor or othertransistors. In some embodiments, the thin film transistor may includeat least one semiconductor layer. The material of the semiconductor mayinclude, but is not limited to, amorphous silicon, polysilicon such aslow-temp polysilicon (LTPS), metal oxide, other suitable materials or acombination thereof. The metal oxide may include indium gallium zincoxide (IGZO), indium zinc oxide (IZO), indium gallium zinc tin oxide(IGZTO), other suitable materials, or a combination thereof. Forexample, in the embodiment where the semiconductor layer is indiumgallium zinc oxide (IGZO) layer, the ratio of In, Ga, Zn and O may be1:1:1:4. In addition, the semiconductor layer may include othercompositions, and may be doped with dopants of p-type or n-type.

The substrate 110 may also include passive elements (not shown), such asa capacitor, an inductor or other passive elements. Further, thesubstrate 110 may also include conductive wires (not shown), which areused to connect to, but is not limited to, thin film transistors orlight-emitting units, such as light-emitting units 120 that will besubsequently described. In some embodiments, the substrate 110 may belight transmissive to allow a portion of light pass through. In someembodiments, an average light transmittance of the substrate 110 may begreater than or equal to 5% and less than or equal to 100%. For example,the average light transmittance of the substrate 110 may be greater thanor equal to, but is not limited to, 50%, 70% or 80%. For instance, theaverage light transmittance may be obtained, but is not limited to, bymeasuring the light transmittances at multiple points, such as threepoints, and then averaging them, or by measuring an average lighttransmittance of a selected area, such as an area of 1 mm².

The display device 100 may include a plurality of light-emitting units120, which are disposed on a surface S1 of the substrate 110. In someembodiments, the light-emitting units 120 may include, but is notlimited to, light-emitting diode (LED), organic light-emitting diode(OLED), quantum dot (QD), quantum-dot-light-emitting diode (QD-LED orQLED), other suitable light-emitting units, or a combination thereof.The LED may include a Mini LED and/or a micro light-emitting diode. Therecombination radiation of electron and hole in the p-n junction of thelight-emitting diode may produce electromagnetic radiation (such aslight). For example, when a forward bias is applied to the p-n junctionformed by direct band gap materials such as gallium arsenide (GaAs) orgallium nitride (GaN), the electrons and holes injected into thedepletion region recombine and then release energy by photons. Theaforementioned electromagnetic radiation may be the visible light or thenon-visible light. Materials with different band gaps may be used toproduce light with different colors.

In some embodiments, the display device 100 may include a sensor 130.The sensor 130 may be disposed on the surface S2, opposite to thesurface S1, of the substrate 110. Although FIG. 1 illustrates merely onesensor 130, the disclosure is not intended to be limited thereto, thatis the display device 100 may include more sensors 130. In someembodiments, the sensor 130 may include an image sensor, an opticalsensor, an ultrasonic sensor, other suitable sensors or a combinationthereof. The image sensor may include a charge coupled device (CCD), acomplementary metal-oxide semiconductor (CMOS), other suitable elements,or a combination thereof. In some embodiments, the light source detectedby the sensor 130 may include infrared light source, visible lightsource and/or ultraviolet light source. The sensor 130 may include aninfrared light sensor, a visible light sensor, an ultraviolet lightsensor or a combination thereof, but is not limited thereto. In someembodiments, light L may penetrate through the substrate 110 and beincident into the sensor 130 because substrate 110 is lighttransmissive.

As shown in FIG. 2, the sensor 130 may include at least one supportingelement 131, at least one light-sensing element 132 and/or at least onelight-receiving element 133. To be noted that the sensor 130 may includeother elements, such as light filter layer, which is used to let lightwith specific wavelength pass through. However, the scope of thedisclosure is not intended to be limited thereto. In some embodiments,at least one light-receiving element 133 is disposed between thesubstrate 110 and at least one light-sensing element 132. In someembodiments, the supporting element 131 is configured to support thelight-sensing element 132, the light-receiving element 133 and/or otherelements or make them be fixed thereon. The supporting element 131 hasan opening to allow light be incident into the light-sensing element 132and at least one light-receiving element 133. In some embodiments, lightmay be incident into the light-sensing element 132 through at least onelight-receiving element 133. In other embodiments, the sensor 130 maynot include a supporting element 131, and there may be other layersformed between the light-sensing element 132 and the light-receivingelement 133, such as light filter layers (not shown), insulation layers(not shown), light-transmitting layer (not shown), other layers or acombination thereof, but is not limited thereto. In some embodiments,the light-receiving element 133 may be omitted or replaced with otherelements. For example, when the sensor 130 is an ultrasonic sensor, thelight-receiving element 133 would be omitted; however, the scope of thedisclosure is not intended to be limited thereto. The light-sensingelement 132 may include a plurality of photodiodes (not shown), whichcan transform the received light into an electronic signal, transmit theelectronic signal to an image processing chip (not shown) and thenrestore to an image. The light-receiving element 133 may be disposed onthe light-sensing element 132 and used to improve, but is not limitedto, the sensitivity of the sensor 130. For instance, the light-receivingelement 133 may include at least one lens. Alternatively, thelight-receiving element 133 may be, but is not limited to, a lens arrayor be formed by stacking multiple lenses. Although FIG. 2 illustratesthat one light-sensing element 132 corresponds to and is disposed on onelight-receiving element 133, the scope of the disclosure is not intendedto be limited. For example, it may be designed that multiplelight-receiving elements 133 constitute an array corresponding to onelight-sensing element 132 or that one light-receiving element 133corresponds to multiple light-sensing elements 132.

Refer to FIG. 3, which illustrates a top view of the display device 100in accordance with some embodiments of the present disclosure. Thedisplay panel 102 may include a display region 100A and a non-displayregion 100B adjacent to the display region 100A; for example, thenon-display region 100B may surround the display region 100A. In someembodiments, the display region 100A may be a region that displays animage, and corresponds to the region of the substrate 110 on which thelight-emitting units 120 are disposed. The non-display region 100B isnot used to display an image, and there are no light-emitting elements120 disposed on the non-display region 100B. The non-display region 100Bmay include light shielding elements (not shown) to shield conductivewires or other elements formed on the substrate 110. The light shieldingelements may include, but is not limited to, a black photoresist, ablack ink, a black resin and/or other suitable light shieldingmaterials. In one embodiment, the light-emitting units 120 may bedisposed in the non-display region 100B but shield by the lightshielding elements.

In some embodiments, the light-emitting units 120 may include at leastone sub-pixel 121. Although FIG. 3 illustrates that one light-emittingunit 120 may include three sub-pixels 121, the disclosure is notintended to be limited thereto, that is one light-emitting unit 120 mayinclude one or more sub-pixels 121, such as four sub-pixels 121. Thesub-pixel 121 shown in FIG. 3 may include blue sub-pixel, red sub-pixel,green sub-pixel and white sub-pixel, which emits blue, red, green andwhite light, respectively; however, the scope of the disclosure is notintended to be limited thereto.

In some embodiments, the light-emitting diodes of the light-emittingunits 120 may include a p-type semiconductor layer, an n-typesemiconductor layer and a light-emitting layer disposed therebetween.The p-type semiconductor layer provides holes, whereas the n-typesemiconductor layer provides electrons; accordingly, the holes and theelectrons recombine to generate electromagnetic radiation. Thesemiconductor layer may include, but is not limited to, aluminum nitride(AlN), GaN, GaAs, indium nitride (InN), aluminum gallium nitride(AlGaN), aluminum indium nitride (AlInN), indium gallium nitride(InGaN), aluminum indium gallium nitride (AlInGaN) or a combinationthereof. The light-emitting layer may include, but is not limited to,homojunction, heterojunction, single-quantum well (SQW),multiple-quantum well (MQW) or any other similar structure. In someembodiments, the light-emitting layer includes un-doped n typeIn_(x)Ga_((1-x))N. In other embodiments, the light-emitting layer mayinclude other suitable material such as Al_(x)In_(y)Ga_((1-x-y))N.Moreover, the light-emitting layer may include a multiple-quantum wellstructure with well layers (such as InGaN) and barrier layers (such asGaN) arranged alternately.

In some embodiments, the light-emitting units 120 may include a moldingmaterial 122, which surrounds and fixes the sub-pixel 121. The moldingmaterial 122 may include a light-transmitting substance and opaquedopants. The material of the substance may include, but is not limitedto, silicon oxide, silicon nitride, resin, other suitable material or acombination thereof. Opaque dopants may include, but is not limited to,black materials or light scattering materials. The light-emitting units120 may further include other elements such as wavelength conversionelements. The wavelength conversion elements may include, but is notlimited to, a quantum dot film, a fluorescent material, or otherwavelength conversion materials. For example, the wavelength conversionelements may be organic or inorganic layers blended with quantum dots.The material of the quantum dot may include, but is not limited to,zinc, cadmium, selenium, sulfur, indium phosphide (InP), galliumantimonide (GaSb), GaAs, cadmium selenide (CdSe), cadmium sulfide (CdS),zinc sulfide (ZnS) or a combination thereof. The size of the quantum dotmay range from about 1 nm to about 30 nm, but the present disclosure isnot limited thereto. The light-emitting units 120 may also include lightfilter layers. The wavelength of light emitted from the light-emittingunits 120 may be adjusted by the wavelength conversion elements and/orthe light filter layers.

As shown in FIGS. 2 and 3, the display device 100 may include aplurality of sensors 130 disposed in the display region 100A. In someembodiments, a portion of at least one sensor 130 may be disposed in thenon-display region 100B. In other embodiments, the display region 100Amay have a central region (not shown) far from the non-display region100B. The plurality of sensors 130 may be disposed in the centralregion, or the plurality of sensors 130 may overlap the central region.For example, the central region may occupy 50% to 95% of the displayregion 100A, such as 70%, 80%, 85%, 90%, or 93%. In some embodiments,the light-receiving element 133 has a function of condensing light. Tobe noted that from a top view, the area of the sensor 130 may be greaterthan or equal to that of the light-receiving element 133. In addition,the outline of the light-receiving element 133 may include, but is notlimited to, circle, oval or other shape. Further, the outline of thesensor 130 may be the same as or different from that of thelight-receiving element 133 in the top view. In some embodiments, thesensor 130 may partially overlap with the light-emitting units 120; morespecifically, light-receiving element 133 may overlap a portion of thelight-emitting units 120. The light, emitted from the light-emittingunits 120, would be incident into the light-receiving element 133through the substrate 110. In some embodiments, the display panel 102may include a light-receiving region 111 that corresponds to a region ofthe display region 100A of the substrate 110 where no light-emittingunit 120 is disposed. The light-receiving region 111 may overlap withthe display region 100A. In some embodiments, at least a portion of thelight-receiving region 111 of the substrate 110 is light transmissive.The average light transmittance of the light-receiving region 111 may begreater than or equal to 1% and less than or equal to 100%, such as 20%,50%, 70%, 80%, 90% or 95%. In one embodiment, the average lighttransmittance of the light-receiving region 111 of the substrate 110 maybe greater than or equal to 5% and less than or equal to 100%, such as20%, 50%, 70%, 80%, 90% or 95%.

In some embodiments, the area of one sensor 130 may be greater than thatof one light-emitting unit 120 in the top view. In some embodiments, thetotal area of one sensor 130 may be greater than the area of onelight-emitting unit 120 in the top view. For example, the total area ofall light-receiving elements 133 in one sensor 130 may be greater thanthe area of one light-emitting unit 120. In some embodiments, the totalarea of all light-receiving elements 133 in one sensor 130 may be in arange of, but is not limited to, about 1 mm² to about 100 mm², that is,1 mm²≤the total area≤100 mm², such as 5 mm², 10 mm², 20 mm² or 50 mm²;however, the scope of the present disclosure is not intended to belimited thereto. The total area may be adjusted according torequirements. In one embodiment where the high resolution is needed, thetotal area of all light-receiving elements 133 may be greater than orequal to 100 mm²; however, the scope of the disclosure is not intendedto be limited thereto. In some embodiments, the total area of allsensors 130 may be less than or equal to the 70% of the area of thedisplay region 100A in the top view. For instance, the total area of alllight-receiving elements 133 may be less than or equal to the 70% of thearea of the display region 100A in the top view. In addition, the areaof the display region 100A may be about 90% of the area of the wholedisplay device 100, and the area of the non-display region 100B may beabout 10% of the area of the whole display device 100; however, thescope of the disclosure is not intended to be limited thereto. In someembodiments, one sensor 130 may overlap with multiple light-emittingunits 120 in the top view. In some embodiments, where a first area isthe overlapping area between the light-receiving element 133 and thelight-emitting units 120, the second area is the area of thelight-receiving element 133, and the ratio of the first area to thesecond area is greater than or equal to 0.01 and less than or equal to0.95—that is, 0.01≤the first area/the second area≤0.95. In theembodiment, the ratio of the area of the light-receiving element 133 ofone sensor 130 to the area of one light-emitting unit 120 is greaterthan 1 and less than 10. In this disclosure, the term “overlap” includes“partially overlap” and “completely overlap”.

Referring to FIG. 4, which illustrates the relation between the focallength of the light-receiving element 133 of the sensor 130 and thedistance between the light-receiving element 133 of the sensor 130 andthe substrate 110. Only the light-receiving element 133 is shown in FIG.4 for brevity. In the normal direction of the surface S2 of thesubstrate 110, the minimum distance between the light-receiving element133 and the surface S2 of the substrate 110 is distance D1, and thefocal length of the light-receiving element 133 is focal length D2. Insome embodiments, the focal length D2 is greater than the distance D1,that is, D2>D1. In some embodiments, the focal length D2 may be greaterthan or equal to 5 times distance D1, and the focal length D2 may beless than or equal to 1000 times distance D1, that is, 5≤D2/D1≤1000. Forexample, D2/D1 may be, but is not limited to, 10, 20, 50, 100 or 500. Insome embodiments, the sensor 130 may include a light-receiving element133 with function of optical zoom so that the focal length D2 of thelight-receiving element 133 can be adjusted.

Referring to FIG. 5, which illustrates a cross-sectional view of adisplay device 200 in accordance with some embodiments of the presentdisclosure. The display device 200 may be the same as or similar to thedisplay device 100, and one of the differences is that the display panel102 of the display device 200 may further include a low transmissionlayer 140. The low transmission layer 140 is disposed on the surface S1of the substrate 110, and between two adjacent light-emitting units 120.For example, the low transmission layer 140 may be disposed in thelight-receiving region 111 as shown in FIG. 3. In some embodiments, thelight transmittance of the low transmission layer 140 in the visiblespectrum may be less than or equal to 50% and greater than or equal to0.5%—that is, 0.5%≤light transmittance≤50%, such as 2%, 5%, 10% or 20%.The light transmittance of the low transmission layer 140 in otherspectrum may be less than or equal to 50%; however, the scope of thedisclosure is not intended to be limited thereto. The material of thelow transmission layer 140 may include a photoresist. In addition, someabsorption materials or other materials can be added into thephotoresist to control the light transmittance of the low transmissionlayer 140. In some embodiments, the light transmittance of the lowtransmission layer 140 may be less than or equal to that of the displaydevice 200.

The absorption materials may include, but is not limited to, zirconiumdioxide (ZrO₂), potassium niobate (KNbO₃), silicon carbide (SiC),gallium phosphide (GaP), gallium arsenide (GaAs), zinc oxide (ZnO),silicon (Si), germanium (Ge), silicon germanium (SiGe), other suitablematerial or a combination thereof.

In some embodiments, the low transmission layer 140 may be patterned toform a plurality of openings 141 in the region corresponding to thedisplay region 100A, or in the region between two adjacentlight-emitting units 120. Light can penetrate substrate 110 and isincident into the sensor 130 through multiple openings 141. Theabove-mentioned patterned process may include photolithography processand an etching process, wherein the photolithography process includesphotoresist coating (e.g., spin-on coating), soft baking, maskalignment, exposure, post-exposure baking, photoresist development,rinsing and drying (e.g., hard baking), other suitable processes or thecombination thereof. The photolithography process may also beimplemented or replaced by maskless photolithography, electron-beamwriting or ion-beam writing. The etching process may include dryetching, wet etching, or other etching methods, such as reactive ionetching.

By forming the low transmission layer 140, the contrast of the displaydevice 200 is improved; as a result, the image of the display device 200becomes much clearer. Further, in order to improve the contrast of theimage and reduce influence on the light sensitivity of the sensor 130,the openings 141 may be formed in the display region 100A, therebyincreasing the amount of light being incident into the sensor 130through the substrate 110. In addition, the quantity and/or the shape ofthe opening 141 may be adjusted according to the requirements, and thescope of the disclosure is not intended to be limited thereto.Furthermore, a transparent material may be filled into the opening 141to compensate the strength of the low transmission layer 140.

Referring to FIG. 6, which illustrates a cross-sectional view of adisplay device 300 in accordance with some embodiments of the presentdisclosure. The display device 300 may be the same as or similar to thedisplay device 100, and one of the differences is that the displaydevice 300 includes a substrate 110′. The substrate 110 of FIG. 1 may bepatterned to form the substrate 110′ and multiple openings 112 therein.In this embodiment, at least one portion of the sensor 130 is notcovered by the substrate 110, wherein the openings 112 expose theportion of the sensor 130. The openings 112 may be formed in the regionof the substrate 110′ that corresponds to the display region 100A. Morespecifically, the openings 112 may be formed between two adjacentlight-emitting units 120. In some embodiments, the openings 112 may beformed on the region corresponding to the light-receiving region 111, asshown in the top view of FIG. 3. The formation of the openings 112assists in increasing the amount of light passing through the substrate110′, thereby improving the light sensitivity of the sensor 130 of thedisplay device 300. Moreover, the shape and/or the quantity of theopenings 112 may be adjusted according to requirements, and the scope ofthe disclosure is not intended to be limited thereto. Further, atransparent material may be filled into the openings 112 to compensatethe strength of the substrate 110′.

Referring to FIGS. 7A and 7B, which illustrate the top view and thecross-sectional view of a display device 400 in accordance with someembodiments of the present disclosure. As shown in FIGS. 7A and 7B, thesensor 130 may be disposed on the surface S1 of the substrate 110 andbetween two adjacent light-emitting units 120. In this embodiment, sincethe light is incident into the sensor 130 without penetrating thesubstrate 110, the sensor 130 can receive much more light, therebyimproving the light sensitivity of the display device 400.

Referring to FIG. 8, which illustrates a cross-sectional view of adisplay device 500 in accordance with some embodiments of the presentdisclosure. The display device 500 may be the same as or similar to thedisplay device 100, and one of the differences is that the displaydevice 500 may further include a supporting substrate 150 and asubstrate 160 disposed on the supporting substrate 150. The supportingsubstrate 150 is configured to support the substrate 160. The materialof the supporting substrate 150 may include polyimide (PI), polyethyleneterephthalate (PET), polyethylene (PE), polyethersulfone (PES),polycarbonate (PC), polymethylmethacrylate (PMMA), polybutyleneterephthalate (PBT), polyethylene naphthalate (PEN), glass, acrylicpolymer, siloxane polymer, other suitable materials or a combinationthereof. In some embodiments, the substrate 160 includes a flexiblesubstrate such as a plastic substrate or other suitable substrate,wherein the material of the plastic substrate may include polyimide,polyethylene terephthalate, polycarbonate, polyethersulfone, polyarylate(PAR), other suitable materials or a combination thereof, but is notlimited thereto.

As shown in FIG. 8, the substrate 160 has the surfaces S1 and S2. Insome embodiments, the substrate 160 includes an extensive region 161that may be defined as a bended region of the substrate 160. As shown inFIG. 8, the light-emitting units 120 may be disposed on the surface S1,and the sensor 130 may be disposed on the extensive region 161 of thesubstrate 160. In this embodiment, the supporting substrate 150 isdisposed between the substrate 160 and the sensor 130. The sensor 130may be disposed between the supporting substrate 150 and the extensiveregion 161.

In some embodiments, the substrate 160 may include a plurality of activeelements such as thin film transistors (not shown), driving thelight-emitting units 120 and making them emit light. The substrate 160may also include passive elements (not shown), such as a capacitor, aninductor or other passive elements. In addition, the substrate 160includes conductive wires (not shown). By providing the flexiblesubstrate 160, more layouts of circuit can be achieved.

Referring to FIG. 9, which illustrates a cross-sectional view of adisplay device 600 in accordance with some embodiments of the presentdisclosure. The display device 600 may be the same as or similar to thedisplay device 500, and one of the differences is that the sensor 130 ofthe display device 600 is not in direct contact with the supportingsubstrate 150. As shown in FIG. 9, the sensor 130 is disposed on theextensive region 161 of the substrate 160. In this embodiment, thesensor 130 may be disposed on the surface S1 of the substrate 160.Further, the display device 600 may include multiple openings 162penetrating the supporting substrate 150 and the substrate 160 andextending to the extensive region 161 of the substrate 160. A portion ofthe sensor 130 is not covered by the supporting substrate 150 and/or thesubstrate 160. More specifically, the openings 162 expose a portion ofthe sensor 130. The supporting substrate 150 and the substrate 160 maybe patterned to form the openings 162. Where the opening 162 are formedmay correspond to the display region 100A, or correspond to the regionbetween two adjacent light-emitting units 120. Light may be incidentinto the sensor 130 through multiple openings 162. Moreover, the shapeand/or the quantity of the opening 162 may be adjusted according torequirements, and the scope of the disclosure is not intended to belimited thereto. Further, a transparent material may be filled into theopening 162.

The display devices 500, 600 shown in FIGS. 8 and/or 9 may be applied tothe tiled display device. The tiled display device mentioned above mayinclude multiple display devices 500 and/or the display devices 600 toform a display device with a larger size; however, the scope of thedisclosure is not intended to be limited thereto. Other display devicesof this disclosure or a combination thereof may also be applied to thetiled display device. In this embodiment, the display panel 102 may atleast include substrate 160 and the light-emitting units 120.

Referring to FIGS. 10A and 10B, which illustrate diagrams that show aninteraction between the display device 100 and objects X and Y inaccordance with some embodiments of the present disclosure. Whendifferent objects pass through the display device 100, the displaydevice 100 will show different images. For example, when objects X and Yare within the sensing region of the display device 100 respectively,the light-emitting units 120 of the display device 100 will emitdifferent light to display different images. To be noted that thedisplay device 100 may be replaced with the display devices 200, 300,400, 500 or 600; however, the scope of the disclosure is not intended tobe limited thereto.

In some embodiments, the image sensor is disposed on the display deviceto achieve the function of interaction. The image sensor may be used todetect a first image and the display may be used to output a secondimage or an action corresponding to the first image. For instance, theimage may use face recognition to display different images according tothe gender of the objects. If the detected object is a male, the imagesensor will display men's clothing or goods in which male is interested;if the detected object is a female, the image sensor will displaywomen's clothing or goods in which female is interested; however, thescope of the disclosure is not intended to be limited thereto. In someembodiments, when the image sensor detects someone passing before it, itwill display an interface provided for inquiring information.

In some embodiments, the image sensor can be integrated into the displayregion of the display device. In some embodiments, the image sensorincludes a light-sensing element and a light-receiving element. In someembodiments, the image sensor may overlap with the light-emitting units.In some embodiments, the light-emitting units and the image sensor maybe disposed on two opposite surfaces of the display panel. In someembodiments, the light-emitting units and the image sensor may bedisposed on the same surface of the display panel. The above-mentionedlight-emitting units may include a plurality of light-emitting diodes,which are driven by the thin film transistors formed within the displaypanel. In some embodiments, the area of one light-receiving element islarger than the area of one light-emitting element. In some embodiments,the display panel may be a flexible substrate having an extensiveregion. The image sensor may be disposed on the extensive region. Insome embodiments, the display device includes a low transmission layerformed on the display panel to improve the contrast of image of thedisplay device.

Although some embodiments of the present disclosure and their advantageshave been described in detail, it should be understood that variouschanges, substitutions and alterations can be made herein withoutdeparting from the spirit and scope of the disclosure as defined by theappended claims. For example, it will be readily understood by thoseskilled in the art that many of the features, functions, processes, andmaterials described herein may be varied while remaining within thescope of the present disclosure. Moreover, the scope of the presentapplication is not intended to be limited to the particular embodimentsof the process, machine, manufacture, composition of matter, means,methods and steps described in the specification. As one of ordinaryskill in the art will readily appreciate from the disclosure of thepresent disclosure, processes, machines, manufacture, compositions ofmatter, means, methods, or steps, presently existing or later to bedeveloped, that perform substantially the same function or achievesubstantially the same result as the corresponding embodiments describedherein may be utilized according to the present disclosure. Accordingly,the appended claims are intended to include within their scope suchprocesses, machines, manufacture, compositions of matter, means,methods, or steps.

What is claimed is:
 1. A display device, comprising: a display panelhaving a display region; and at least one image sensor overlapping thedisplay region, wherein one of the at least one image sensor has a focallength, and the focal length is greater than a distance between the oneof the at least one image sensor and the display panel, and wherein theat least one image sensor comprises: a light-sensing element; and atleast one light-receiving element disposed on the light-sensing element.2. The display device as claimed in claim 1, further comprises asubstrate and a supporting substrate disposed between the substrate andthe at least one image sensor.
 3. The display device as claimed in claim1, wherein the display panel includes a light-receiving region, and thelight-receiving region has at least one region with an average lighttransmittance that is greater than 1% and less than 100%.
 4. The displaydevice as claimed in claim 3, wherein the average light transmittance isgreater than 5% and less than 100%.
 5. The display device as claimed inclaim 1, wherein the display panel comprises a plurality oflight-emitting units, and one of the at least one light-receivingelement overlaps at least one of the plurality of light-emitting units.6. The display device as claimed in claim 1, wherein the display panelcomprises a plurality of light-emitting units, and an area of one of theat least one light-receiving element is greater than an area of one ofthe plurality of light-emitting units from a top view.
 7. The displaydevice as claimed in claim 1, wherein the display region furthercomprises a non-display region adjacent to the display region, thedisplay region has a central region far from the non-display region, thecentral region occupies 50% to 95% of the display region, and the atleast one image sensor is disposed in the central region.
 8. The displaydevice as claimed in claim 1, wherein the display panel comprises asubstrate and a plurality of light-emitting units, and the substratecomprises a plurality of thin film transistors used to drive theplurality of light-emitting units.
 9. The display device as claimed inclaim 8, wherein at least one of the thin film transistors comprises asemiconductor layer, and a material of the semiconductor layer comprisesamorphous silicon, polysilicon or metal oxide.
 10. A display device,comprising: a display panel having a display region; and at least onesensor overlapping the display region, wherein one of the at least onesensor has a focal length, and the focal length is greater than adistance between the one of the at least one sensor and the displaypanel.
 11. The display device as claimed in claim 10, further comprisesa substrate and a supporting substrate disposed between the substrateand the at least one sensor.
 12. The display device as claimed in claim10, wherein the display panel includes a light-receiving region, and thelight-receiving region has at least one region with an average lighttransmittance is greater than 1% and less than 100%.
 13. The displaydevice as claimed in claim 12, wherein the average light transmittancethat is greater than 5% and less than 100%.
 14. The display device asclaimed in claim 10, wherein the display panel comprises a plurality oflight-emitting units and the at least one sensor comprises at least onelight-receiving element, and one of the at least one light-receivingelement overlaps at least one of the plurality of light-emitting units.15. The display device as claimed in claim 14, wherein the display panelcomprises a plurality of light-emitting units, and an area of one of theat least one light-receiving element is greater than an area of one ofthe plurality of light-emitting units from a top view.
 16. The displaydevice as claimed in claim 10, wherein the display region furthercomprises a non-display region adjacent to the display region, thedisplay region has a central region far from the non-display region, thecentral region occupies 50% to 95% of the display region, and the atleast one sensor is disposed in the central region.
 17. The displaydevice as claimed in claim 10, wherein the display panel comprises asubstrate and a plurality of light-emitting units, and the substratecomprises a plurality of thin film transistors used to drive theplurality of light-emitting units.
 18. The display device as claimed inclaim 17, wherein at least one of the thin film transistors comprises asemiconductor layer, and a material of the semiconductor layer comprisesamorphous silicon, polysilicon or metal oxide.
 19. The display device asclaimed in claim 11, wherein the substrate has an extensive region thatis a bended region of the substrate, and the at least one sensor isdisposed on the extensive region.
 20. The display device as claimed inclaim 19, wherein the display device comprises multiple openingspenetrating the supporting substrate and the substrate and extending tothe extensive region of the substrate.